The kinetics of the ζ-phase formation from a supersaturated α-Cu(Ge) solid solution (i.e., transformation from the fcc crystal structure to the hcp crystal structure) containing 10.8 at. pct Ge [at isothermal temperatures of 573 K, 613 K, and 653 K (300 °C, 340 °C, and 380 °C)] were studied by X-ray diffraction (XRD) for phase fraction determination. Both in situ and ex situ annealing experiments were performed. The transformation kinetics were modeled on the basis of a versatile modular model. The transformation kinetics complied with a site-saturation nucleation mode and strongly anisotropic interface-controlled growth mode in association with a corresponding impingement mode: diffusion of Ge (towards the stacking faults, SFs) does not control the transformation rate. Transmission electron microscopy (TEM) investigations showed that segregation of Ge at the stacking faults (SFs) takes place (relatively fast) prior to the structural transformation (fcc → hcp).