Highly strained direct bandgap Germanium cavities for a monolithic laser on Si

Zabel T, Marin E, Geiger R, Bozon C, Tardif S, Guilloy K, Gassenq A, Escalante J, Niquet YM, Duchemin I, Rothman J, Pauc N, Rieutord F, Reboud V, Calvo V, Hartmann JM, Widiez J, Tchelnokov A, Faist J & Sigg H
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Zabel, T., Marin, E., Geiger, R., Bozon, C., Tardif, S., Guilloy, K., … Sigg, H. (2016). Highly strained direct bandgap Germanium cavities for a monolithic laser on Si. In IEEE international conference on group IV photonics GFP. 2019 IEEE 16th international conference on group IV photonics (GFP) (pp. 40-41). https://doi.org/10.1109/GROUP4.2016.7739082
https://www.dora.lib4ri.ch/psi/islandora/object/psi:64775

Cavity enhanced photoluminescence at a wavelength as long as 5 μm is obtained in uniaxial tensile strained GeOI micro-bridges. We show, using temperature dependent photoluminescence spectroscopy, a crossover to fundamental direct bandgap and reveal from a mode analysis the free carrier induced loss increase.

Details
Publication Type

Proceedings Paper

Title

Highly strained direct bandgap Germanium cavities for a monolithic laser on Si

Author(s)

Zabel, T. (6218 Quantum Technologies)

Marin, E. (6200 Micro- and Nanotechnology)

Geiger, R. (6200 Micro- and Nanotechnology)

Bozon, C.

Tardif, S.

Guilloy, K.

Gassenq, A.

Escalante, J.

Niquet, Y.M.

Duchemin, I.

Rothman, J.

Pauc, N.

Rieutord, F.

Reboud, V.

Calvo, V.

Hartmann, J.M.

Widiez, J.

Tchelnokov, A.

Faist, J.

Sigg, H. (6200 Micro- and Nanotechnology)

Conference Proceedings

2019 IEEE 16th international conference on group IV photonics (GFP)

Editor(s)

(editor)

Series Title

IEEE international conference on group IV photonics GFP

Publisher

IEEE

Start Page

40

End Page

41

Publication Year

2016

Conference

16th international conference on group IV photonics (GFP)

Conference Place

Shanghai

Conference Date

August 24-26, 2016

Collection

PSI Publications