In contrast to static holographic phase shifters, which are restricted to specific electron beam energies and microscope settings, Boersch phase shifters are promising for creating programmable arrays for generating two- and three-dimensional electron beam patterns. We recently demonstrated a three-element Boersch phase shifter device [Thakkar et al., J. Appl. Phys. 128 (2020), 134502], which was fabricated by electron beam lithography and is compatible with up-scaling. However, it suffers from parasitic beam deflection and resulting cross-talk. Here, we report a five-layer phase shifter device, which is based on a metal-insulator-metal-insulator-metal structure as originally envisioned by Boersch that reduces cross-talk. We demonstrate a three-element Boersch phase shifter that shows minimal beam deflection of voltage-controlled three-electron-beam interference patterns in a transmission electron microscope operated at 200 keV. The feasibility of using such multi-element phase shifter arrays is discussed.