Crystal growth with oxygen partial pressure of the BaCuSi&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;6&lt;/sub&gt; and Ba&lt;sub&gt;1–&lt;em&gt;x&lt;/em&gt;&lt;/sub&gt;Sr&lt;sub&gt;&lt;em&gt;x&lt;/em&gt;&lt;/sub&gt;CuSi&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;6&lt;/sub&gt; spin dimer compounds

van Well, Natalija; Puphal, Pascal; Wehinger, Björn; Kubus, Mariusz; Schefer, Jürg; Rüegg, Christian; Ritter, Franz; Krellner, Cornelius; Assmus, Wolf

doi:10.1021/acs.cgd.6b00399

Crystal growth with oxygen partial pressure of the BaCuSi₂O₆ and Ba_1–xSr_xCuSi₂O₆

van Well N, Puphal P, Wehinger B, Kubus M, Schefer J, Rüegg C, Ritter F, Krellner C & Assmus W

Citation

van Well, N., Puphal, P., Wehinger, B., Kubus, M., Schefer, J., Rüegg, C., … Assmus, W. (2016). Crystal growth with oxygen partial pressure of the BaCuSi₂O₆ and Ba_1–xSr_xCuSi₂O₆ spin dimer compounds. Crystal Growth and Design, 16(6), 3416-3424. https://doi.org/10.1021/acs.cgd.6b00399

Persistent URL https://www.dora.lib4ri.ch/psi/islandora/object/psi:8052

BaCuSi₂O₆ is a quasi-two-dimensional spin dimer system and a model material for studying Bose–Einstein condensation (BEC) of magnons in high magnetic fields. The new Ba_1–xSr_xCuSi₂O₆ mixed system, which can be grown with x ≤ 0.3, and BaCuSi₂O₆, both grown by using a crystal growth method with enhanced oxygen partial pressure, have the same tetragonal structure (I4₁/acd) at room temperature. The mixed system shows no structural phase transition so that the tetragonal structure is stable down to low temperatures. The oxygen partial pressure acts as a control parameter for the growth process. A detailed understanding of the crystal structure depending on the oxygen content will enable the study of the spin dynamics of field-induced order states in this model magnetic compound of high current interest with only one type of dimer layers, which shows the same distance between the Cu atoms, in the structure.