| Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET
Dutta, D., De, D. S., Fan, D., Roy, S., Alfieri, G., Camarda, M., … Jung, T. A. (2019). Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET. Applied Physics Letters, 115(10), 101601 (5 pp.). https://doi.org/10.1063/1.5112779 |
| All-dielectric metasurface-based roll-angle sensor
Chen, X., Tao, Z., Chen, C., Wang, C., Wang, L., Jiang, H., … Liu, S. (2018). All-dielectric metasurface-based roll-angle sensor. Sensors and Actuators A: Physical, 279, 509-517. https://doi.org/10.1016/j.sna.2018.06.058 |
| Strain and thermal conductivity in ultrathin suspended silicon nanowires
Fan, D., Sigg, H., Spolenak, R., & Ekinci, Y. (2017). Strain and thermal conductivity in ultrathin suspended silicon nanowires. Physical Review B, 96(11), 115307 (11 pp.). https://doi.org/10.1103/PhysRevB.96.115307 |
| From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute
Buitrago, E., Fallica, R., Fan, D., Karim, W., Vockenhuber, M., van Bokhoven, J. A., & Ekinci, Y. (2016). From powerful research platform for industrial EUV photoresist development, to world record resolution by photolithography: EUV interference lithography at the Paul Scherrer Institute. In G. Lérondel, S. Kawata, & Y. H. Cho (Eds.), Proceedings of SPIE: Vol. 9926. UV and higher energy photonics: from materials to applications (p. 99260T (12 pp.). https://doi.org/10.1117/12.2238805 |
| SnO<sub>x</sub> high-efficiency EUV interference lithography gratings towards the ultimate resolution in photolithography
Buitrago, E., Fallica, R., Fan, D., Kulmala, T. S., Vockenhuber, M., & Ekinci, Y. (2016). SnOx high-efficiency EUV interference lithography gratings towards the ultimate resolution in photolithography. Microelectronic Engineering, 155, 44-49. https://doi.org/10.1016/j.mee.2016.02.023 |
| Nanolithography using Bessel beams of extreme ultraviolet wavelength
Fan, D., Wang, L., & Ekinci, Y. (2016). Nanolithography using Bessel beams of extreme ultraviolet wavelength. Scientific Reports, 6, 31301 (8 pp.). https://doi.org/10.1038/srep31301 |
| Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility
Fan, D., Buitrago, E., Yang, S., Karim, W., Wu, Y., Tai, R., & Ekinci, Y. (2016). Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility. Microelectronic Engineering, 155, 55-60. https://doi.org/10.1016/j.mee.2016.02.026 |
| Photolithography reaches 6 nm half-pitch using EUV light
Fan, D., & Ekinci, Y. (2016). Photolithography reaches 6 nm half-pitch using EUV light. In E. M. Panning & K. A. Goldberg (Eds.), Proceedings of SPIE: Vol. 9776. Extreme ultraviolet (EUV) lithography VII (p. 97761V (11 pp.). https://doi.org/10.1117/12.2219737 |
| Photolithography reaches 6 nm half-pitch using extreme ultraviolet light
Fan, D., & Ekinci, Y. (2016). Photolithography reaches 6 nm half-pitch using extreme ultraviolet light. Journal of Micro/Nanolithography, MEMS, and MOEMS, 15(3), 033505 (7 pp.). https://doi.org/10.1117/1.JMM.15.3.033505 |
| Nickel electroplating for high-resolution nanostructures
Hili, K., Fan, D., Guzenko, V. A., & Ekinci, Y. (2015). Nickel electroplating for high-resolution nanostructures. Microelectronic Engineering, 141, 122-128. https://doi.org/10.1016/j.mee.2015.02.031 |
| Fabrication of ultrahigh resolution metal nanowires and nanodots through EUV interference lithography
Huang, J., Fan, D., Ekinci, Y., & Padeste, C. (2015). Fabrication of ultrahigh resolution metal nanowires and nanodots through EUV interference lithography. Microelectronic Engineering, 141, 32-36. https://doi.org/10.1016/j.mee.2015.01.016 |
| EUV resists towards 11 nm half-pitch
Ekinci, Y., Vockenhuber, M., Mojarad, N., & Fan, D. (2014). EUV resists towards 11 nm half-pitch. In O. R. Wood II & E. M. Panning (Eds.), Proceedings of SPIE: Vol. 9048. Extreme ultraviolet (EUV) lithography V (p. 904804 (10 pp.). https://doi.org/10.1117/12.2046459 |
| Ultra-dense silicon nanowires using extreme ultraviolet interference lithography
Fan, D., Sigg, H., Gobrecht, J., Ekinci, Y., & Spolenak, R. (2014). Ultra-dense silicon nanowires using extreme ultraviolet interference lithography. In P. Kallio (Ed.), 2014 international conference on manipulation, manufacturing and measurement on the nanoscale (3M-NANO). Conference proceedings (pp. 122-125). https://doi.org/10.1109/3M-NANO.2014.7057336 |
| Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths
Mojarad, N., Fan, D., Gobrecht, J., & Ekinci, Y. (2014). Broadband interference lithography at extreme ultraviolet and soft x-ray wavelengths. Optics Letters, 39(8), 2286-2289. https://doi.org/10.1364/OL.39.002286 |
| Facile fabrication of high-resolution extreme ultraviolet interference lithography grating masks using footing strategy during electron beam writing
Wang, L., Fan, D., Guzenko, V. A., & Ekinci, Y. (2013). Facile fabrication of high-resolution extreme ultraviolet interference lithography grating masks using footing strategy during electron beam writing. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 31(6), 06F602 (5 pp.). https://doi.org/10.1116/1.4822016 |
