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Continuous wave lasing in strained germanium microbridge
Armand Pilon, F. T., Niquet, Y. M., Reboud, V., Calvo, V., Pauc, N., Widiez, J., … Sigg, H. (2020). Continuous wave lasing in strained germanium microbridge. In IEEE photonics conference (IPC). 2020 IEEE photonics conference (IPC). Proceedings (p. 9252547 (2 pp.). https://doi.org/10.1109/IPC47351.2020.9252547
Taking advantage of multiplet structure for lineshape analysis in Fourier space
Beckert, A., Sigg, H., & Aeppli, G. (2020). Taking advantage of multiplet structure for lineshape analysis in Fourier space. Optics Express, 28(17), 24937-24950. https://doi.org/10.1364/OE.395877
Lasing in strained germanium microbridges
Armand Pilon, F. T., Lyasota, A., Niquet, Y. M., Reboud, V., Calvo, V., Pauc, N., … Sigg, H. (2019). Lasing in strained germanium microbridges. Nature Communications, 10, 2724 (8 pp.). https://doi.org/10.1038/s41467-019-10655-6
GeSn lasers with uniaxial tensile strain in the gain medium
Chretien, J., Pauc, N., Pilon, F. A., Bertrand, M., Thai, Q. M., Casiez, L., … Calvo, V. (2019). GeSn lasers with uniaxial tensile strain in the gain medium. In 2019 IEEE 16th international conference on group IV photonics (GFP) (p. 8926113 (2 pp.). https://doi.org/10.1109/GROUP4.2019.8926113
GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain
Chrétien, J., Pauc, N., Armand Pilon, F., Bertrand, M., Thai, Q. M., Casiez, L., … Calvo, V. (2019). GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain. ACS Photonics, 6(10), 2462-2469. https://doi.org/10.1021/acsphotonics.9b00712
Silicon carbide X-ray beam position monitors for synchrotron applications
Nida, S., Tsibizov, A., Ziemann, T., Woerle, J., Moesch, A., Schulze-Briese, C., … Camarda, M. (2019). Silicon carbide X-ray beam position monitors for synchrotron applications. Journal of Synchrotron Radiation, 26(1), 28-35. https://doi.org/10.1107/S1600577518014248
Strained germanium lasing in the mid-infrared
Pilon, F. T. A., Lyasota, A., Niquet, Y. M., Reboud, V., Calvo, V., Pauc, N., … Sigg, H. (2019). Strained germanium lasing in the mid-infrared. In 2019 IEEE 16th international conference on group IV photonics (GFP) (p. (2 pp.). https://doi.org/10.1109/GROUP4.2019.8925921
Surface morphology of 4H-SiC after thermal oxidation
Woerle, J., Šimonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., … Grossner, U. (2019). Surface morphology of 4H-SiC after thermal oxidation. P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, F. Padfield, & P. A. Mawby (Eds.), Materials science forum: Vol. 963. (pp. 180-183). Presented at the 12th European conference on silicon carbide and related materials (ECSRM 2018). https://doi.org/10.4028/www.scientific.net/MSF.963.180
Two-dimensional defect mapping of the SiO<sub>2</sub>/4<em>H</em>−SiC interface
Woerle, J., Johnson, B. C., Bongiorno, C., Yamasue, K., Ferro, G., Dutta, D., … Camarda, M. (2019). Two-dimensional defect mapping of the SiO2/4H−SiC interface. Physical Review Materials, 3(8), 084602 (8 pp.). https://doi.org/10.1103/PhysRevMaterials.3.084602
Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters
von den Driesch, N., Stange, D., Rainko, D., Breuer, U., Capellini, G., Hartmann, J. M., … Buca, D. (2019). Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters. Solid State Electronics, 155, 139-143. https://doi.org/10.1016/j.sse.2019.03.013
Emerging optical gain in highly strained Germanium
Armand Pilon, F., Pauc, N., Widiez, J., Reboud, V., Calvo, V., Hartmann, J. M., … Sigg, H. (2018). Emerging optical gain in highly strained Germanium. In Integrated photonics research, silicon and nanophotonics: Vol. ITu4I. Advanced photonics 2018 (BGPP, IPR, NP, NOMA, sensors, networks, SPPCom, SOF) (p. ITu4I.3 (2 pp.). https://doi.org/10.1364/IPRSN.2018.ITu4I.3
GeSn/SiGeSn heterostructure and multi quantum well lasers
Stange, D., von den Driesch, N., Zabel, T., Armand-Pilon, F., Rainko, D., Marzban, B., … Buca, D. (2018). GeSn/SiGeSn heterostructure and multi quantum well lasers. ACS Photonics, 5(11), 4628-4636. https://doi.org/10.1021/acsphotonics.8b01116
Quantum confinement effects in GeSn/SiGeSn heterostructure lasers
Stange, D., von den Driesch, N., Rainko, D., Zabel, T., Marzban, B., Ikonic, Z., … Buca, D. (2018). Quantum confinement effects in GeSn/SiGeSn heterostructure lasers. In International electron devices meeting (IEDM). 2017 IEEE international electron devices meeting (IEDM) (pp. 24.2.1-24.2.4). https://doi.org/10.1109/IEDM.2017.8268451
Advanced GeSn/SiGeSn group IV heterostructure lasers
von den Driesch, N., Stange, D., Rainko, D., Povstugar, I., Zaumseil, P., Capellini, G., … Buca, D. (2018). Advanced GeSn/SiGeSn group IV heterostructure lasers. Advanced Science, 5(6), 1700955 (7 pp.). https://doi.org/10.1002/advs.201700955
Epitaxy of direct bandgap group IV Si-Ge-Sn alloys towards heterostructure light emitters
von den Driesch, N., Stange, D., Rainko, D., Povstugar, I., Breuer, U., Ikonic, Z., … Buca, D. (2018). Epitaxy of direct bandgap group IV Si-Ge-Sn alloys towards heterostructure light emitters. In Q. Liu, J. M. Hartmann, A. Thean, S. Miyazaki, A. Ogura, X. Gong, … D. L. Harame (Eds.), ECS transactions: Vol. 86. SiGe, Ge, and related materials: materials, processing, and devices 8 (pp. 189-197). https://doi.org/10.1149/08607.0189ecst
Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces
Camarda, M., Woerle, J., Souliere, V., Ferro, G., Sigg, H., Grossner, U., & Gobrecht, J. (2017). Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces. In K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Materials science forum: Vol. 897. Silicon carbide and related materials 2016 (pp. 107-110). https://doi.org/10.4028/www.scientific.net/MSF.897.107
Strain and thermal conductivity in ultrathin suspended silicon nanowires
Fan, D., Sigg, H., Spolenak, R., & Ekinci, Y. (2017). Strain and thermal conductivity in ultrathin suspended silicon nanowires. Physical Review B, 96(11), 115307. https://doi.org/10.1103/PhysRevB.96.115307
Surface enhanced infrared absorption of chemisorbed carbon monoxide using plasmonic nanoantennas
Haase, J., Bagiante, S., Sigg, H., & van Bokhoven, J. A. (2017). Surface enhanced infrared absorption of chemisorbed carbon monoxide using plasmonic nanoantennas. Optics Letters, 42(10), 1931-1934. https://doi.org/10.1364/OL.42.001931
Analysis of thin thermal oxides on (0001) sic epitaxial layers
Woerle, J., Camarda, M., Schneider, C. W., Sigg, H., Grossner, U., & Gobrecht, J. (2017). Analysis of thin thermal oxides on (0001) sic epitaxial layers. In K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Materials science forum: Vol. 897. Silicon carbide and related materials 2016 (pp. 119-122). https://doi.org/10.4028/www.scientific.net/MSF.897.119
Electronic band structure of the buried SiO<sub>2</sub>/SiC interface investigated by soft x-ray ARPES
Woerle, J., Bisti, F., Husanu, M. A., Strocov, V. N., Schneider, C. W., Sigg, H., … Camarda, M. (2017). Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES. Applied Physics Letters, 110(13), 132101 (5 pp.). https://doi.org/10.1063/1.4979102
 

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