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Ion implanted phosphorous for 4h-sic vdmosfets source regions: effect of the post implantation annealing time
Nipoti, R., Parisini, A., Boldrini, V., Vantaggio, S., Gorni, M., Canino, M., … Grossner, U. (2020). Ion implanted phosphorous for 4h-sic vdmosfets source regions: effect of the post implantation annealing time. H. Yano, T. Ohshima, K. Eto, S. Harada, T. Mitani, & Y. Tanaka (Eds.), Materials science forum: Vol. 1004. (pp. 698-704). Presented at the 18th international conference on silicon carbide and related materials 2019 (ICSCRM 2019). https://doi.org/10.4028/www.scientific.net/MSF.1004.698
Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET
Dutta, D., De, D. S., Fan, D., Roy, S., Alfieri, G., Camarda, M., … Jung, T. A. (2019). Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET. Applied Physics Letters, 115(10), 101601 (5 pp.). https://doi.org/10.1063/1.5112779
Optically active defects at the SiC/SiO<sub>2</sub> interface
Johnson, B. C., Woerle, J., Haasmann, D., Lew, C. T. K., Parker, R. A., Knowles, H., … McCallum, J. C. (2019). Optically active defects at the SiC/SiO2 interface. Physical Review Applied, 12(4), 044024 (7 pp.). https://doi.org/10.1103/PhysRevApplied.12.044024
Investigation of the Young's modulus and the residual stress of 4H-SiC circular membranes on 4H-SiC substrates
Messaoud, J. B., Michaud, J. F., Certon, D., Camarda, M., Piluso, N., Colin, L., … Alquier, D. (2019). Investigation of the Young's modulus and the residual stress of 4H-SiC circular membranes on 4H-SiC substrates. Micromachines, 10(12), 801 (12 pp.). https://doi.org/10.3390/mi10120801
Silicon carbide X-ray beam position monitors for synchrotron applications
Nida, S., Tsibizov, A., Ziemann, T., Woerle, J., Moesch, A., Schulze-Briese, C., … Camarda, M. (2019). Silicon carbide X-ray beam position monitors for synchrotron applications. Journal of Synchrotron Radiation, 26(1), 28-35. https://doi.org/10.1107/S1600577518014248
Surface morphology of 4H-SiC after thermal oxidation
Woerle, J., Šimonka, V., Müller, E., Hössinger, A., Sigg, H., Selberherr, S., … Grossner, U. (2019). Surface morphology of 4H-SiC after thermal oxidation. P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, F. Padfield, & P. A. Mawby (Eds.), Materials science forum: Vol. 963. (pp. 180-183). Presented at the 12th European conference on silicon carbide and related materials (ECSRM 2018). https://doi.org/10.4028/www.scientific.net/MSF.963.180
Two-dimensional defect mapping of the SiO<sub>2</sub>/4<em>H</em>−SiC interface
Woerle, J., Johnson, B. C., Bongiorno, C., Yamasue, K., Ferro, G., Dutta, D., … Camarda, M. (2019). Two-dimensional defect mapping of the SiO2/4H−SiC interface. Physical Review Materials, 3(8), 084602 (8 pp.). https://doi.org/10.1103/PhysRevMaterials.3.084602
SiCILIA—silicon carbide detectors for intense luminosity investigations and applications
Tudisco, S., La Via, F., Agodi, C., Altana, C., Borghi, G., Boscardin, M., … Zimbone, M. (2018). SiCILIA—silicon carbide detectors for intense luminosity investigations and applications. Sensors, 18(7), 2289 (16 pp.). https://doi.org/10.3390/s18072289
Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces
Camarda, M., Woerle, J., Souliere, V., Ferro, G., Sigg, H., Grossner, U., & Gobrecht, J. (2017). Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces. In K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Materials science forum: Vol. 897. Silicon carbide and related materials 2016 (pp. 107-110). https://doi.org/10.4028/www.scientific.net/MSF.897.107
Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements
Privitera, S. M. S., Litrico, G., Camarda, M., Piluso, N., & La Via, F. (2017). Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements. Applied Physics Express, 10(3), 036601 (4 pp.). https://doi.org/10.7567/APEX.10.036601
Analysis of thin thermal oxides on (0001) sic epitaxial layers
Woerle, J., Camarda, M., Schneider, C. W., Sigg, H., Grossner, U., & Gobrecht, J. (2017). Analysis of thin thermal oxides on (0001) sic epitaxial layers. In K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Materials science forum: Vol. 897. Silicon carbide and related materials 2016 (pp. 119-122). https://doi.org/10.4028/www.scientific.net/MSF.897.119
Electronic band structure of the buried SiO<sub>2</sub>/SiC interface investigated by soft x-ray ARPES
Woerle, J., Bisti, F., Husanu, M. A., Strocov, V. N., Schneider, C. W., Sigg, H., … Camarda, M. (2017). Electronic band structure of the buried SiO2/SiC interface investigated by soft x-ray ARPES. Applied Physics Letters, 110(13), 132101 (5 pp.). https://doi.org/10.1063/1.4979102
4H-SiC(0001) surface faceting during interaction with liquid Si
Soulière, V., Carole, D., Camarda, M., Wörle, J., Grossner, U., Dezellus, O., & Ferro, G. (2016). 4H-SiC(0001) surface faceting during interaction with liquid Si. M. Saggio, F. Roccaforte, F. Giannazzo, D. Crippa, F. La Via, & R. Nipoti (Eds.), Materials Science Forum: Vol. 858. (pp. 163-166). Presented at the 16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015. https://doi.org/10.4028/www.scientific.net/MSF.858.163