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Increasing the sensitivity of nonchemically amplified resists by oxime sulfonate-functionalized polystyrene
An, H., Chen, J., Zeng, Y., Yu, T., Wang, S., Guo, X., … Li, Y. (2024). Increasing the sensitivity of nonchemically amplified resists by oxime sulfonate-functionalized polystyrene. ACS Applied Polymer Materials, 6(9), 5374-5384. https://doi.org/10.1021/acsapm.4c00573
Designing EUV negative tone resist and underlayer approaches exhibiting 14nm half-pitch resolution
Dang, L. N., Tseng, L. T., Rajak, A., Gädda, T., Laukkanen, M., Salunke, J., … Ekinci, Y. (2024). Designing EUV negative tone resist and underlayer approaches exhibiting 14nm half-pitch resolution. In D. Guerrero & G. R. Amblard (Eds.), Proceedings of SPIE - The international society for optical engineering: Vol. 12957. Advances in patterning materials and processes (p. 129570I). https://doi.org/10.1117/12.3014297
Extreme ultraviolet photoresponse of organotin-based photoresists with borate counteranions
Evrard, Q., Sadegh, N., Mathew, S., Zuidinga, E., Watts, B., Paradiz Dominguez, M., … Brouwer, A. M. (2024). Extreme ultraviolet photoresponse of organotin-based photoresists with borate counteranions. ACS Applied Materials and Interfaces, 16, 42947-42956. https://doi.org/10.1021/acsami.4c08636
Optimization strategy for epoxy cross-linked molecular glass photoresist in EUV lithography
Gao, J., Zhang, S., Cui, X., Cong, X., Guo, X., Hu, R., … Yang, G. (2024). Optimization strategy for epoxy cross-linked molecular glass photoresist in EUV lithography. Journal of Photochemistry and Photobiology A: Chemistry, 453, 115684. https://doi.org/10.1016/j.jphotochem.2024.115684
Extreme ultraviolet lithography reaches 5 nm resolution
Giannopoulos, I., Mochi, I., Vockenhuber, M., Ekinci, Y., & Kazazis, D. (2024). Extreme ultraviolet lithography reaches 5 nm resolution. Nanoscale, 16(33), 15533-15543. https://doi.org/10.1039/d4nr01332h
Heterometallic Ti-Zr oxo nanocluster photoresists for advanced lithography
Qiao, Y., Shi, G., Zhang, O., Li, Y., Vockenhuber, M., Ekinci, Y., … Zhang, L. (2024). Heterometallic Ti-Zr oxo nanocluster photoresists for advanced lithography. Science China - Materials. https://doi.org/10.1007/s40843-024-3013-9
Approaching angstrom-scale resolution in lithography using low-molecular-mass resists (<500 Da)
Saifullah, M. S. M., Rajak, A. K., Hofhuis, K. A., Tiwale, N., Mahfoud, Z., Testino, A., … Ekinci, Y. (2024). Approaching angstrom-scale resolution in lithography using low-molecular-mass resists (<500 Da). ACS Nano, 18(35), 23827-24604. https://doi.org/10.1021/acsnano.4c03939
Advancements in EUV photoresists for high-NA lithography
Develioglu, A., Vockenhuber, M., Van Lent-Protasova, L., Mochi, I., Ekinci, Y., & Kazazis, D. (2023). Advancements in EUV photoresists for high-NA lithography. In P. P. Naulleau, P. A. Gargini, T. Itani, & K. G. Ronse (Eds.), Proceedings of SPIE - the international society for optical engineering: Vol. 12750. International conference on extreme ultraviolet lithography (p. 1275008 (11 pp.). https://doi.org/10.1117/12.2686250
The EUV lithography resist screening activities in H2-2022
Develioglu, A., Allenet, T. P., Vockenhuber, M., van Lent-Protasova, L., Mochi, I., Ekinci, Y., & Kazazis, D. (2023). The EUV lithography resist screening activities in H2-2022. In D. Guerrero & G. R. Amblard (Eds.), Proceedings of SPIE: Vol. 12498. Advances in patterning materials and processes XL (p. 1249805 (9 pp.). https://doi.org/10.1117/12.2660859
Influence of the anion in tin-based EUV photoresists properties
Evrard, Q., Sadegh, N., Hsu, C. C., Mahne, N., Giglia, A., Nannarone, S., … Brouwer, A. M. (2023). Influence of the anion in tin-based EUV photoresists properties. In D. Guerrero & G. R. Amblard (Eds.), Proceedings of SPIE: Vol. 12498. Advances in patterning materials and processes XL (p. 124980Z (6 pp.). https://doi.org/10.1117/12.2658498
Enhancing the sensitivity of a high resolution negative-tone metal organic photoresist for extreme ultra violet lithography
Lewis, S. M., Alty, H. R., Vockenhuber, M., DeRose, G. A., Kazazis, D., Timco, G. A., … Winpenny, R. (2023). Enhancing the sensitivity of a high resolution negative-tone metal organic photoresist for extreme ultra violet lithography. In D. Guerrero & G. R. Amblard (Eds.), Proceedings of SPIE: Vol. 12498. Advances in patterning materials and processes XL (p. 124980X (8 pp.). https://doi.org/10.1117/12.2658324
Charge shielding-oriented design of zinc-based nanoparticle liquids for controlled nanofabrication
Tao, P., Wang, Q., Vockenhuber, M., Zhu, D., Liu, T., Wang, X., … He, X. (2023). Charge shielding-oriented design of zinc-based nanoparticle liquids for controlled nanofabrication. Journal of the American Chemical Society, 145(43), 23609-23619. https://doi.org/10.1021/jacs.3c07595
Nonchemically amplified molecular resists based on sulfonium-functionalized sulfone derivatives for sub-13 nm nanolithography
Wang, Y., Chen, J., Zeng, Y., Yu, T., Wang, S., Guo, X., … Li, Y. (2023). Nonchemically amplified molecular resists based on sulfonium-functionalized sulfone derivatives for sub-13 nm nanolithography. ACS Applied Nano Materials, 6(19), 18480-18490. https://doi.org/10.1021/acsanm.3c03900
Sulfonium-functionalized polystyrene-based nonchemically amplified resists enabling sub-13 nm nanolithography
Wang, Z., Chen, J., Yu, T., Zeng, Y., Guo, X., Wang, S., … Li, Y. (2023). Sulfonium-functionalized polystyrene-based nonchemically amplified resists enabling sub-13 nm nanolithography. ACS Applied Materials and Interfaces, 15(1), 2289-2300. https://doi.org/10.1021/acsami.2c19940
Suppressing of secondary electron diffusion for high-precision nanofabrication
Wang, Q., Zhou, Y., Wang, X., Gao, H., Shu, Z., Hu, Z., … He, X. (2023). Suppressing of secondary electron diffusion for high-precision nanofabrication. Materials Today, 67, 95-105. https://doi.org/10.1016/j.mattod.2023.06.005
Theoretical insights into the solubility polarity switch of metal–organic nanoclusters for nanoscale patterning
Wang, Q., Vockenhuber, M., Cui, H., Wang, X., Tao, P., Hu, Z., … He, X. (2023). Theoretical insights into the solubility polarity switch of metal–organic nanoclusters for nanoscale patterning. Small Methods, 7(10), 2300309 (11 pp.). https://doi.org/10.1002/smtd.202300309
EUV resist screening update: progress towards High-NA lithography
Allenet, T., Vockenhuber, M., Yeh, C. K., Santaclara, J. G., van Lent-Protasova, L., Ekinci, Y., & Kazazis, D. (2022). EUV resist screening update: progress towards High-NA lithography. In D. P. Sanders & D. Guerrero (Eds.), Proceedings of SPIE: Vol. 12055. Advances in patterning materials and processes XXXIX (p. 120550F (10 pp.). https://doi.org/10.1117/12.2614171
Influence of counteranions on the performance of tin-based EUV photoresists
Evrard, Q., Sadegh, N., Ekinci, Y., Vockenhuber, M., Mahne, N., Giglia, A., … Brouwer, A. M. (2022). Influence of counteranions on the performance of tin-based EUV photoresists. Journal of Photopolymer Science and Technology, 35(1), 95-100. https://doi.org/10.2494/photopolymer.35.95
Sensitivity enhancement of a high-resolution negative-tone nonchemically amplified metal organic photoresist for extreme ultraviolet lithography
Lewis, S. M., Alty, H. R., Vockenhuber, M., DeRose, G. A., Fernandez-Mato, A., Kazazis, D., … Winpenny, R. E. P. (2022). Sensitivity enhancement of a high-resolution negative-tone nonchemically amplified metal organic photoresist for extreme ultraviolet lithography. Journal of Micro/Nanopatterning, Materials, and Metrology, 21(4), 041404 (9 pp.). https://doi.org/10.1117/1.JMM.21.4.041404
Fluorine-rich zinc oxoclusters as extreme ultraviolet photoresists: chemical reactions and lithography performance
Thakur, N., Vockenhuber, M., Ekinci, Y., Watts, B., Giglia, A., Mahne, N., … Brouwer, A. M. (2022). Fluorine-rich zinc oxoclusters as extreme ultraviolet photoresists: chemical reactions and lithography performance. ACS Materials Au, 2(3), 343-355. https://doi.org/10.1021/acsmaterialsau.1c00059
 

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