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  • (-) Funding (EC, SNSF) = Understanding processing-induced defects to improve semiconductor device manufacturing technology
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Al-implantation induced damage in 4H-SiC
Kumar, P., Martins, M. I. M., Bathen, M. E., Prokscha, T., & Grossner, U. (2024). Al-implantation induced damage in 4H-SiC. Materials Science in Semiconductor Processing, 174, 108241 (8 pp.). https://doi.org/10.1016/j.mssp.2024.108241
Low energy muon study of the p-n interface in chalcopyrite solar cells
Alberto, H. V., Vilão, R. C., Ribeiro, E. F. M., Gil, J. M., Curado, M. A., Teixeira, J. P., … Weidinger, A. (2023). Low energy muon study of the p-n interface in chalcopyrite solar cells. In Journal of physics: conference series: Vol. 2462. The 15th international conference on muon spin rotation, relaxation and resonance (p. 012047 (6 pp.). https://doi.org/10.1088/1742-6596/2462/1/012047
Investigation of the SiO<sub>2</sub>-SiC interface using low-energy muon-spin-rotation spectroscopy
Kumar, P., Mendes Martins, M. I., Etzelmüller Bathen, M., Woerle, J., Prokscha, T., & Grossner, U. (2023). Investigation of the SiO2-SiC interface using low-energy muon-spin-rotation spectroscopy. Physical Review Applied, 19(5), 054025 (17 pp.). https://doi.org/10.1103/PhysRevApplied.19.054025
Defect profiling of oxide‐semiconductor interfaces using low‐energy muons
Mendes Martins, M., Kumar, P., Woerle, J., Ni, X., Grossner, U., & Prokscha, T. (2023). Defect profiling of oxide‐semiconductor interfaces using low‐energy muons. Advanced Materials Interfaces, 10(21), 2300209 (10 pp.). https://doi.org/10.1002/admi.202300209
Depth profiling of LE-<em>µ</em>SR parameters with musrfit
Mendes Martins, M., Suter, A., Salman, Z., & Prokscha, T. (2023). Depth profiling of LE-µSR parameters with musrfit. In Journal of physics: conference series: Vol. 2462. The 15th international conference on muon spin rotation, relaxation and resonance (p. 012025 (4 pp.). https://doi.org/10.1088/1742-6596/2462/1/012025
Depth-resolved study of the SiO<sub>2</sub>-SiC interface using low-energy muon spin rotation spectroscopy
Kumar, P., Martins, M. I. M., Bathen, M. E., Woerle, J., Prokscha, T., & Grossner, U. (2022). Depth-resolved study of the SiO2-SiC interface using low-energy muon spin rotation spectroscopy. In J. F. Michaud, L. V. Phung, D. Alquier, & D. Planson (Eds.), Materials science forum: Vol. 1062. Silicon carbide and related materials 2021 (pp. 315-319). https://doi.org/10.4028/p-w73601