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High-energy photoemission final states beyond the free-electron approximation
Strocov, V. N., Lev, L. L., Alarab, F., Constantinou, P., Wang, X., Schmitt, T., … Minár, J. (2023). High-energy photoemission final states beyond the free-electron approximation. Nature Communications, 14, 4827 (11 pp.). https://doi.org/10.1038/s41467-023-40432-5
High-efficiency diffraction gratings for EUV and soft x-rays using spin-on-carbon underlayers
Wang, X., Kazazis, D., Tseng, L. T., Robinson, A. P. G., & Ekinci, Y. (2022). High-efficiency diffraction gratings for EUV and soft x-rays using spin-on-carbon underlayers. Nanotechnology, 33(6), 065301 (10 pp.). https://doi.org/10.1088/1361-6528/ac328b
Progress in EUV resist screening towards the deployment of high-NA lithography
Allenet, T., Wang, X., Vockenhuber, M., Yeh, C. K., Mochi, I., Santaclara, J. G., … Ekinci, Y. (2021). Progress in EUV resist screening towards the deployment of high-NA lithography. In N. M. Felix & A. Lio (Eds.), Proceedings of SPIE: Vol. 11609. Extreme ultraviolet (EUV) lithography XII (p. 116090J (10 pp.). https://doi.org/10.1117/12.2583983
Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks
Tseng, L. T., Kazazis, D., Wang, X., Popescu, C. M., Robinson, A. P. G., & Ekinci, Y. (2019). Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks. Microelectronic Engineering, 210, 8-13. https://doi.org/10.1016/j.mee.2019.03.002
Progress in EUV resists for contact holes printing using EUV interference lithography
Wang, X., Tseng, L. T., Mochi, I., Vockenhuber, M., van Lent-Protasova, L., Custers, R., … Ekinci, Y. (2019). Progress in EUV resists for contact holes printing using EUV interference lithography. In U. F. W. Behringer & J. Finders (Eds.), Proceedings of SPIE: Vol. 11177. 35th European mask and lithography conference (EMLC 2019) (p. 111770U (8 pp.). https://doi.org/10.1117/12.2535678
Progress in EUV resists towards high-NA EUV lithography
Wang, X., Tasdemir, Z., Mochi, I., Vockenhuber, M., van Lent-Protasova, L., Meeuwissen, M., … Ekinci, Y. (2019). Progress in EUV resists towards high-NA EUV lithography. In K. A. Goldberg (Ed.), Proceedings of SPIE: Vol. 10957. Extreme ultraviolet (EUV) lithography X (p. 109570A (9 pp.). https://doi.org/10.1117/12.2516260
Progress overview of EUV resists status towards high-NA EUV lithography
Wang, X., Tseng, L. T., Mochi, I., Vockenhuber, M., van Lent-Protasova, L., Custers, R., … Ekinci, Y. (2019). Progress overview of EUV resists status towards high-NA EUV lithography. In T. Itani, P. A. Gargini, P. P. Naulleau, & K. G. Ronse (Eds.), Proceedings of SPIE: Vol. 11147. International conference on extreme ultraviolet lithography 2019 (p. 1114711 (10 pp.). https://doi.org/10.1117/12.2536923
Studying resist performance for contact holes printing using EUV interference lithography
Wang, X., Tseng, L. T., Kazazis, D., Tasdemir, Z., Vockenhuber, M., Mochi, I., & Ekinci, Y. (2019). Studying resist performance for contact holes printing using EUV interference lithography. Journal of Micro/Nanolithography, MEMS, and MOEMS, 18(1), 013501 (11 pp.). https://doi.org/10.1117/1.JMM.18.1.013501
Orbital ordering of the mobile and localized electrons at oxygen-deficient LaAlO<sub>3</sub>/SrTiO<sub>3</sub> interfaces
Chikina, A., Lechermann, F., Husanu, M. A., Caputo, M., Cancellieri, C., Wang, X., … Strocov, V. N. (2018). Orbital ordering of the mobile and localized electrons at oxygen-deficient LaAlO3/SrTiO3 interfaces. ACS Nano, 12(8), 7927-7935. https://doi.org/10.1021/acsnano.8b02335
<em>k</em>-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures
Lev, L. L., Maiboroda, I. O., Husanu, M. A., Grichuk, E. S., Chumakov, N. K., Ezubchenko, I. S., … Strocov, V. N. (2018). k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures. Nature Communications, 9(1), 2653 (9 pp.). https://doi.org/10.1038/s41467-018-04354-x
Evaluation of EUV resists for 5 nm technology node and beyond
Tasdemir, Z., Wang, X., Mochi, I., van Lent-Protasova, L., Meeuwissen, M., Custers, R., … Ekinci, Y. (2018). Evaluation of EUV resists for 5 nm technology node and beyond. In K. G. Ronse, E. Hendrickx, P. P. Naulleau, P. A. Gargini, & T. Itani (Eds.), Proceedings of SPIE: Vol. 10809. International conference on extreme ultraviolet lithography 2018 (p. 108090L (10 pp.). https://doi.org/10.1117/12.2502688
Studying resist performance for contact holes printing using EUV interference lithography
Wang, X., Tseng, L. T., Kazazis, D., Tasdemir, Z., Vockenhuber, M., Mochi, I., & Ekinci, Y. (2018). Studying resist performance for contact holes printing using EUV interference lithography. In K. G. Ronse, E. Hendrickx, P. P. Naulleau, P. A. Gargini, & T. Itani (Eds.), Proceedings of SPIE: Vol. 10809. International conference on extreme ultraviolet lithography 2018 (p. 108091Z (13 pp.). https://doi.org/10.1117/12.2501949