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Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks
Tseng, L. T., Kazazis, D., Wang, X., Popescu, C. M., Robinson, A. P. G., & Ekinci, Y. (2019). Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks. Microelectronic Engineering, 210, 8-13. https://doi.org/10.1016/j.mee.2019.03.002