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Ion implanted phosphorous for 4h-sic vdmosfets source regions: effect of the post implantation annealing time
Nipoti, R., Parisini, A., Boldrini, V., Vantaggio, S., Gorni, M., Canino, M., … Grossner, U. (2020). Ion implanted phosphorous for 4h-sic vdmosfets source regions: effect of the post implantation annealing time. H. Yano, T. Ohshima, K. Eto, S. Harada, T. Mitani, & Y. Tanaka (Eds.), Materials science forum: Vol. 1004. (pp. 698-704). Presented at the 18th international conference on silicon carbide and related materials 2019 (ICSCRM 2019). https://doi.org/10.4028/www.scientific.net/MSF.1004.698