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Spatial segregation of substitutional B atoms in graphene patterned by the moiré superlattice on Ir(111)
Cuxart, M. G., Perilli, D., Tömekce, S., Deyerling, J., Haag, F., Muntwiler, M., … Auwärter, W. (2023). Spatial segregation of substitutional B atoms in graphene patterned by the moiré superlattice on Ir(111). Carbon, 201, 881-890. https://doi.org/10.1016/j.carbon.2022.09.087
Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces
Camarda, M., Woerle, J., Souliere, V., Ferro, G., Sigg, H., Grossner, U., & Gobrecht, J. (2017). Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces. In K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Materials science forum: Vol. 897. Silicon carbide and related materials 2016 (pp. 107-110). https://doi.org/10.4028/www.scientific.net/MSF.897.107
4H-SiC(0001) surface faceting during interaction with liquid Si
Soulière, V., Carole, D., Camarda, M., Wörle, J., Grossner, U., Dezellus, O., & Ferro, G. (2016). 4H-SiC(0001) surface faceting during interaction with liquid Si. In F. Roccaforte, F. La Via, R. Nipoti, D. Crippa, F. Giannazzo, & M. Saggio (Eds.), Materials science forum: Vol. 858. Silicon carbide and related materials 2015. Selected, peer reviewed papers from the 16th international conference on silicon carbide and related materials, October 4-9, 2015, Giardini Naxos, Italy (pp. 163-166). https://doi.org/10.4028/www.scientific.net/MSF.858.163
Current status of the front ends at the SLS
Chen, Q., Bächli, H., Höchli, C., Wullschleger, R., Abela, R., Ingold, G., … Wang, X. (2007). Current status of the front ends at the SLS. In J. Y. Choi & S. Rah (Eds.), AIP conference proceedings: Vol. 879. Synchrotron radiation instrumentation. Ninth international conference on synchrotron radiation instrumentation (pp. 1030-1033). https://doi.org/10.1063/1.2436238