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Effects of structural and microstructural features on the total scattering pattern of nanocrystalline materials
Dengo, N., Masciocchi, N., Cervellino, A., Guagliardi, A., & Bertolotti, F. (2022). Effects of structural and microstructural features on the total scattering pattern of nanocrystalline materials. Nanomaterials, 12(8), 1252 (17 pp.). https://doi.org/10.3390/nano12081252
Ligand-induced symmetry breaking, size and morphology in colloidal lead sulfide QDs: from classic to thiourea precursors
Bertolotti, F., Proppe, A. H., Dirin, D. N., Liu, M., Voznyy, O., Cervellino, A., … Guagliardi, A. (2018). Ligand-induced symmetry breaking, size and morphology in colloidal lead sulfide QDs: from classic to thiourea precursors. Chemistry Squared, 2(1) (14 pp.). https://doi.org/10.28954/2018.csq.02.001
Exploration of near-infrared-emissive colloidal multinary lead halide perovskite nanocrystals using an automated microfluidic platform
Lignos, I., Morad, V., Shynkarenko, Y., Bernasconi, C., Maceiczyk, R. M., Protesescu, L., … Kovalenko, M. V. (2018). Exploration of near-infrared-emissive colloidal multinary lead halide perovskite nanocrystals using an automated microfluidic platform. ACS Nano, 12(6), 5504-5517. https://doi.org/10.1021/acsnano.8b01122
Size-dependent fault-driven relaxation and faceting in zincblende CdSe colloidal quantum dots
Moscheni, D., Bertolotti, F., Piveteau, L., Protesescu, L., Dirin, D. N., Kovalenko, M. V., … Guagliardi, A. (2018). Size-dependent fault-driven relaxation and faceting in zincblende CdSe colloidal quantum dots. ACS Nano, 12(12), 12558-12570. https://doi.org/10.1021/acsnano.8b07092
Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES
Bouravleuv, A. D., Lev, L. L., Piamonteze, C., Wang, X., Schmitt, T., Khrebtov, A. I., … Strocov, V. N. (2016). Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES. Nanotechnology, 27(42), 425706 (10 pp.). https://doi.org/10.1088/0957-4484/27/42/425706
SiGe quantum dot crystals with periods down to 35 nm
Dais, C., Mussler, G., Fromherz, T., Müller, E., Solak, H. H., & Grützmacher, D. (2015). SiGe quantum dot crystals with periods down to 35 nm. Nanotechnology, 26(25), 255302 (6 pp.). https://doi.org/10.1088/0957-4484/26/25/255302
Shape and composition change of Ge dots due to Si capping
Kirfel, O., Müller, E., Grützmacher, D., Kern, K., Hesse, A., Stangl, J., … Bauer, G. (2004). Shape and composition change of Ge dots due to Si capping. Applied Surface Science, 224(1-4), 139-142. https://doi.org/10.1016/j.apsusc.2003.08.042
Shape transformation of Ge quantum dots due to Si overgrowth
Kirfel, O., Müller, E., Grützmacher, D., & Kern, K. (2003). Shape transformation of Ge quantum dots due to Si overgrowth. Physica E: Low-Dimensional Systems and Nanostructures, 16(3-4), 602-608. https://doi.org/10.1016/S1386-9477(02)00638-0