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Solid-state color centers for single-photon generation
Andrini, G., Amanti, F., Armani, F., Bellani, V., Bonaiuto, V., Cammarata, S., … Vitali, V. (2024). Solid-state color centers for single-photon generation. Photonics, 11(2), 188 (23 pp.). https://doi.org/10.3390/photonics11020188
Al-implantation induced damage in 4H-SiC
Kumar, P., Martins, M. I. M., Bathen, M. E., Prokscha, T., & Grossner, U. (2024). Al-implantation induced damage in 4H-SiC. Materials Science in Semiconductor Processing, 174, 108241 (8 pp.). https://doi.org/10.1016/j.mssp.2024.108241
Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Alyabyeva, N., Ding, J., Sauty, M., Woerle, J., Jousseaume, Y., Ferro, G., … Rowe, A. C. H. (2023). Nanoscale mapping of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces. Physica Status Solidi B: Basic Research, 260(5), 2200356 (6 pp.). https://doi.org/10.1002/pssb.202200356
FEM heat transfer modelling with tomography-based SiC<sub>f</sub>/SiC unit cell
Cavaliere, A., Marone, F., Cozzo, C., Buchanan, K., Lorrette, C., & Pouchon, M. A. (2023). FEM heat transfer modelling with tomography-based SiCf/SiC unit cell. High Temperatures-High Pressures, 52(2), 95-110. https://doi.org/10.32908/hthp.v52.1281
Defect profiling of oxide‐semiconductor interfaces using low‐energy muons
Mendes Martins, M., Kumar, P., Woerle, J., Ni, X., Grossner, U., & Prokscha, T. (2023). Defect profiling of oxide‐semiconductor interfaces using low‐energy muons. Advanced Materials Interfaces, 10(21), 2300209 (10 pp.). https://doi.org/10.1002/admi.202300209
Silicon carbide X-ray beam position monitors for synchrotron applications
Nida, S., Tsibizov, A., Ziemann, T., Woerle, J., Moesch, A., Schulze-Briese, C., … Camarda, M. (2019). Silicon carbide X-ray beam position monitors for synchrotron applications. Journal of Synchrotron Radiation, 26(1), 28-35. https://doi.org/10.1107/S1600577518014248
SiCILIA—silicon carbide detectors for intense luminosity investigations and applications
Tudisco, S., La Via, F., Agodi, C., Altana, C., Borghi, G., Boscardin, M., … Zimbone, M. (2018). SiCILIA—silicon carbide detectors for intense luminosity investigations and applications. Sensors, 18(7), 2289 (16 pp.). https://doi.org/10.3390/s18072289
Analysis of thin thermal oxides on (0001) sic epitaxial layers
Woerle, J., Camarda, M., Schneider, C. W., Sigg, H., Grossner, U., & Gobrecht, J. (2017). Analysis of thin thermal oxides on (0001) sic epitaxial layers. In K. Zekentes, K. V. Vasilevskiy, & N. Frangis (Eds.), Materials science forum: Vol. 897. Silicon carbide and related materials 2016 (pp. 119-122). https://doi.org/10.4028/www.scientific.net/MSF.897.119
Dopant imaging of power semiconductor device cross sections
Gysin, U., Meyer, E., Glatzel, T., Günzburger, G., Rossmann, H. R., Jung, T. A., … Bartolf, H. (2016). Dopant imaging of power semiconductor device cross sections. Microelectronic Engineering, 160, 18-21. https://doi.org/10.1016/j.mee.2016.02.056
Junction Barrier Schottky (JBS) rectifier interface engineering facilitated by two-dimensional (2D) dopant imaging
Rossmann, H. R., Gysin, U., Bubendorf, A., Glatzel, T., Reshanov, S. A., Zhang, A., … Bartolf, H. (2016). Junction Barrier Schottky (JBS) rectifier interface engineering facilitated by two-dimensional (2D) dopant imaging. In F. Roccaforte, F. La Via, R. Nipoti, D. Crippa, F. Giannazzo, & M. Saggio (Eds.), Materials science forum: Vol. 858. Silicon carbide and related materials 2015 (pp. 497-500). https://doi.org/10.4028/www.scientific.net/MSF.858.497
Development of power semiconductors by quantitative nanoscale dopant imaging
Bartolf, H., Gysin, U., Rossmann, H. R., Bubendorf, A., Glatzel, T., Jung, T. A., … Schöner, A. (2015). Development of power semiconductors by quantitative nanoscale dopant imaging. In International symposium on power semiconductor devices and ics (ISPSD). 2015 IEEE 27th international symposium on power semiconductor devices and ics (ISPSD) (pp. 281-284). https://doi.org/10.1109/ISPSD.2015.7123444
Combined experimental-numerical approach to determine radiation properties of particle suspensions
Marti, J., Roesle, M., & Steinfeld, A. (2014). Combined experimental-numerical approach to determine radiation properties of particle suspensions. Journal of Heat Transfer, 136(9), 092701 (7 pp.). https://doi.org/10.1115/1.4027768
Negative muon spin rotation study of acceptor centers in SiC
Stoykov, A., Herlach, D., Scheuermann, R., Zimmermann, U., Gritsay, K., & Mamedov, T. (2009). Negative muon spin rotation study of acceptor centers in SiC. Physica B: Condensed Matter, 404(5-7), 824-826. https://doi.org/10.1016/j.physb.2008.11.162
Advances in gas-fired thermophotovoltaic systems
Durisch, W., Von Roth, F., & Tobler, W. J. (2007). Advances in gas-fired thermophotovoltaic systems. Journal of Solar Energy Engineering, 129(4), 416-422. https://doi.org/10.1115/1.2770749
Modeling of the carbon-rich c(4 × 4) reconstruction on Si(1 0 0)
Remediakis, I. N., Guedj, C., Kelires, P. C., Grützmacher, D., & Kaxiras, E. (2004). Modeling of the carbon-rich c(4 × 4) reconstruction on Si(1 0 0). Surface Science, 554(2-3), 90-102. https://doi.org/10.1016/j.susc.2004.02.016